Large Brillouin amplification in silicon
Large Brillouin amplification in silicon
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DOI：
10.1038/nphoton.2016.112
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发表时间：
2016-07-01
期刊：
影响因子：
35
通讯作者：
Rakich, Peter T.
中科院分区：
文献类型：
--
作者：
Kittlaus, Eric A.;Shin, Heedeuk;Rakich, Peter T.
在纳米硅波导中，克尔非线性和拉曼非线性都被严密的光模约束从根本上增强了（1-4）。与直觉相反，布里渊非线性——源自光子和声子之间的耦合——在这些非线性波导中非常微弱(5)。强布里布鲁相互作用直到最近才在一类新的光力学结构中实现，这种结构可以控制引导光子和声子之间的相互作用（5-7）。尽管取得了这些重大进展，但在硅中还没有观察到明显的基于布里渊的光学放大。使用膜悬浮波导，我们首次报道了硅中的大布里渊放大，在适度的泵浦功率下达到大于5 dB的水平，并证明了创纪录的低净放大阈值（5 mW）。这项工作是实现高性能硅布里渊激光器和放大器的重要一步。
Both Kerr and Raman nonlinearities are radically enhanced by tight optical-mode confinement in nanoscale silicon waveguides(1-4). Counterintuitively, Brillouin nonlinearities-originating from coupling between photons and acoustic phonons-are exceedingly weak in these same nonlinear waveguides(5). Strong Brillouin interactions have only recently been realized in a new class of optomechanical structures that control the interaction between guided photons and phonons(5-7). Despite these major advances, appreciable Brillouin-based optical amplification has yet to be observed in silicon. Using a membrane-suspended waveguide, we report large Brillouin amplification in silicon for the first time, reaching levels greater than 5 dB for modest pump powers, and demonstrate a record low(5 mW) threshold for net amplification. This work represents an important step towards the realization of high-performance Brillouin lasers and amplifiers in silicon.