Hydrogen surface segregation on Si(111) by photon-stimulated desorption at the Si K edge
Hydrogen surface segregation on Si(111) by photon-stimulated desorption at the Si K edge
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通过 Si K 边缘处的光子激发解吸，氢在 Si(111) 上进行表面偏析
DOI：
10.1103/physrevb.26.2292
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发表时间：
1982
影响因子：
3.7
通讯作者：
Z. Hussain
中科院分区：
文献类型：
--
作者：
M. Knotek;G. Loubriel;R. Stulen;C. Parks;B. Koel;Z. Hussain
本文报道了在Si K激发阈值附近的光子能量下，H/sup +/从解理Si（111）上的光子激发脱附。的H表面偏析的时间依赖性从散装以下分裂显示两个或三个连续的时间制度的增长动力学表明多个连续的氢化物相的形成。从H-饱和表面去除H导致随后仅观察到第一时间制度（我们将其解释为由于形成单氢化物相）。
The photon-stimulated desorption of H/sup +/ from cleaved Si(111) using photon energies near the Si K excitation threshold is reported. The time dependence of the H surface segregation from the bulk following cleavage shows two or three sequential time regimes of growth kinetics suggesting multiple sequential hydride phase formations. Removal of the H from the H-saturated surface results in the subsequent observation of only the first time regime (which we interpret as being due to formation of a monohydride phase).