Monolithic pixel detectors for high energy physics
Monolithic pixel detectors for high energy physics
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DOI：
10.1016/j.nima.2013.05.073
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发表时间：
2013-12
影响因子：
1.4
通讯作者：
W. Snoeys
中科院分区：
文献类型：
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作者：
W. Snoeys
单片像素探测器集成了传感器矩阵和一块硅的读出已经彻底改变了消费者应用的成像，但尽管多年的研究，他们还没有被广泛采用的高能物理。该应用的两个主要要求是辐射耐受性和低功耗，需要通过漂移来收集最极端辐射水平的电荷，并优化所收集的信号电荷与输入电容之比（Q/C）。它表明，单片探测器可以实现低模拟功耗的Q/C，甚至carryout的承诺，实际上消除模拟功耗，但结合concilientQ/C，收集漂移，读出电路的像素内的集成仍然是一个挑战。本报告概述了应对这一挑战的不同办法，并指出了可能的利弊。
Monolithic pixel detectors integrating sensor matrix and readout in one piece of silicon have revolutionized imaging for consumer applications, but despite years of research they have not yet been widely adopted for high energy physics. Two major requirements for this application, radiation tolerance and low power consumption, require charge collection by drift for the most extreme radiation levels and an optimization of the collected signal charge over input capacitance ratio (Q/C). It is shown that monolithic detectors can achieveQ/Cfor low analog power consumption and even carryout the promise to practically eliminate analog power consumption, but combining sufficientQ/C, collection by drift, and integration of readout circuitry within the pixel remains a challenge. An overview is given of different approaches to address this challenge, with possible advantages and disadvantages.