In‐plane polarization of GaN‐based heterostructures with arbitrary crystal orientation
In‐plane polarization of GaN‐based heterostructures with arbitrary crystal orientation
复制标题
任意晶体取向的GaN基异质结构的面内极化
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
Fernando Ponce
中科院分区：
文献类型：
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作者：
Q. Wei;Ti Li;Z. H. Wu;Fernando Ponce
计算了0≤x≤0.4的准晶InxGa1−xN/GaN和AlxGa1−xN/GaN异质结构的总极化场与晶体取向的关系。特别注意的是平面内压电极化的方向和大小，这对于非极性和半极性生长是不可忽略的。对于任意晶体取向，InGaN/GaN体系以压电极化为主，而AlGaN/GaN体系以自发极化为主。在非极性薄膜中，由极化场引起的平面内电势取决于异质结的平面度和各自的横向尺寸。
The total polarization fields of pseudomorphic InxGa1−xN/GaN and AlxGa1−xN/GaN heterostructures with 0 ≤ x ≤ 0.4 have been calculated as a function of the crystal orientation. Especial attention is placed on the direction and magnitude of in‐plane piezoelectric polarization, which is not negligible for the non‐polar and semi‐polar growth. For an arbitrary crystal orientation, the piezoelectric polarization prevails in the InGaN/GaN system while the spontaneous polarization prevails in the AlGaN/GaN system. The in‐plane potential due to polarization fields in non‐polar epilayers is found to depend on the degree of planarity of the heterojunctions, and on the respective lateral dimensions.