Temperature dependence of thermoelectric properties of Ni-doped CoSb3
Temperature dependence of thermoelectric properties of Ni-doped CoSb3
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DOI：
10.1016/j.jpcs.2005.05.077
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发表时间：
2005-10-01
影响因子：
4
通讯作者：
Noda, Y
中科院分区：
文献类型：
--
作者：
Kitagawa, H;Wakatsuki, M;Noda, Y
在20 ~ 773 K温度范围内，研究了Ni掺杂CoSb_3的霍尔系数、霍尔迁移率和热电性能随温度的变化关系。Ni掺杂的CoSb 3是一种n型半导体，在450 K附近，其导电类型由n型转变为p型。从n型到p型转变的温度随着Ni含量x的增加而增加。Seebeck系数在相变温度附近达到最大值。电阻率表明，当x = 0.03时，Co_（1-x）Ni_xSb_3是典型的半导体。热导率分析表明，在较低的温度下，晶格成分是占主导地位的，载流子和双极成分在高于转变温度的温度下变大。热电优值在转变温度附近达到最大值，当x = 0.05时，热电优值在600 K时达到最大值4.67 × 10（-4）K-1。(c)2005爱思唯尔有限公司保留所有权利。
Temperature dependences of the Hall coefficient, Hall mobility and thermoelectric properties of Ni-doped CoSb3 have been characterized over the temperature range from 20 to 773 K. Ni-doped CoSb3 is an n-type semiconductor and the conduction type changes front n-type to p-type at around 450 K. The temperature for the transition from n-type to p-type increased with increasing Ni content x. The Seebeck coefficient reaches a maximum value near the transition temperature. The electrical resistivity indicates that Co1-xNixSb3 is a typical semiconductor when x 0.03. Thermal conductivity analyses show that the lattice component is predominant at lower temperatures and carrier and bipolar components become large at temperatures higher than the transition temperature. The thermoelectric figure of merit reaches a maximum value close to the transition temperature and the largest value, 4.67 X 10(-4) K-1 at 600 K, was obtained for x = 0.05. (c) 2005 Elsevier Ltd. All rights reserved.