Molecular dynamics simulation of silicon oxidation enhanced by energetic hydrogen ion irradiation
Molecular dynamics simulation of silicon oxidation enhanced by energetic hydrogen ion irradiation
复制标题
高能氢离子辐照增强硅氧化的分子动力学模拟
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
S. Hamaguchi
中科院分区：
文献类型：
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作者：
Kohei Mizotani;M. Isobe;M. Fukasawa;K. Nagahata;T. Tatsumi;S. Hamaguchi
采用分子动力学数值模拟方法研究了HBr/O2等离子体刻蚀硅栅时硅氧化增强的机理。这种增强的氧化有时表现为在栅极蚀刻工艺期间的Si凹陷。当Si衬底受到高能离子轰击与自由基物种的通量一起，我们的研究已经确定了这种增强的氧化在Si中的增强的O扩散所产生的动量转移从高能H原子到O原子的表面上或在Si衬底的次表面的原因。没有化学效应，如硅的氢化作用的增强氧化的作用。模拟结果被认为是在良好的协议与早期的离子辐照增强的氧化束实验获得的实验观察。
Molecular dynamics numerical simulations have been performed to clarify the mechanism of enhanced oxidation in Si during silicon gate etching by HBr/O2 plasmas. Such enhanced oxidation sometimes manifests itself as Si recess during gate etching processes. When a Si substrate is subject to energetic ion bombardment together with a flux of radical species, our study has identified the cause of such enhanced oxidation in Si as enhanced O diffusion arising from the momentum transfer from energetic H atoms to O atoms on the surface or in the subsurface of the Si substrate. No chemical effect such as hydrogenation of Si plays a role for the enhanced oxidation. Simulation results are found to be in good agreement with earlier experimental observations of ion-irradiation-enhanced oxidation obtained by beam experiments.