Emissive probe measurement of electron temperature in high‐pressure plasmas (≥1 mTorr)
Emissive probe measurement of electron temperature in high‐pressure plasmas (≥1 mTorr)
复制标题
高压等离子体中电子温度的发射探针测量 (≥1 mTorr)
DOI：
10.1063/1.1140066
复制
发表时间：
1988
影响因子：
1.6
通讯作者：
T. Tamaru
中科院分区：
文献类型：
--
作者：
H. Shindo;M. Konishi;T. Tamaru
研究了一种利用发射探针测定电子温度的新方法。该方法的基础是利用浮动电位和发射探针的加热电压之间的函数关系。得到了悬浮电位随加热电压和电子温度变化的新表达式。这个表达式使我们能够从测量的浮势中确定电子温度。在相对较高的压力（1mtorr以上）下对本方法进行了实验验证。结果表明，用该方法测得的电子温度与用朗缪尔特性法测得的电子温度一致，误差不超过10%。进一步强调，该方法非常有吸引力，因为所需的电路与电势测量中使用的电路相同。
A new method was investigated to determine the electron temperature with the emissive probe. The basis of the method is the use of a functional relationship between the floating potential and the heating voltage of the emissive probe. A new expression for the change of the floating potential was obtained as functions of the heating voltage and the electron temperature. This expression enabled us to determine the electron temperature from the measured floating potential. An experimental verification of the present method was made at relatively high pressures (above 1 mTorr). It was shown that the electron temperatures measured by the present method were consistent with those obtained by Langmuir characteristics and that the error in them did not exceed 10%. It was emphasized, further, that the method is very attractive because the circuit required is the same as that used in potential measurement.