Grain-Size Enlargement of MoS2 Film by Low-Rate Sputtering with Molybdenum Grid

Grain-Size Enlargement of MoS2 Film by Low-Rate Sputtering with Molybdenum Grid
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DOI:
10.1109/edtm55494.2023.10103043
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发表时间:
2023-03
期刊:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
影响因子:
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通讯作者:
Shinya Imai;Ryo Ono;I. Muneta;K. Kakushima;T. Tatsumi
Shinya Imai;Ryo Ono;I. Muneta;K. Kakushima;T. Tatsumi
中科院分区:
其他
文献类型:
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作者:
Shinya Imai;Ryo Ono;I. Muneta;K. Kakushima;T. Tatsumi

文献摘要

相似文献

低速率溅射与钼网格降低$\text{MoS}_{2}$薄膜的沉积速率,扩大晶粒尺寸测量的平面X射线衍射。通过拉曼光谱测试,薄膜的结晶度得到了改善,这是因为低速率溅射提高了S/Mo比。这为pn-堆叠2D-CMOS器件提供了更好的$\text{MoS}_{2}$膜。
Low-rate sputtering with a molybdenum grid reduced the deposition rate of $\text{MoS}_{2}$ films, enlarging a grain size measured by in-plane X-ray diffraction. The $\text{MoS}_{2}$ film crystallinity evaluated by the Raman spectroscopy was improved because the S/Mo ratio was also enhanced by the low-rate sputtering. They contributed to a better-quality of $\text{MoS}_{2}$ film for pn-stacked 2D-CMOS devices.