Size distribution and electroluminescence of self-assembled Ge dots
Size distribution and electroluminescence of self-assembled Ge dots
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自组装Ge点的尺寸分布和电致发光
DOI：
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发表时间：
2000
期刊：
影响因子：
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通讯作者：
A. Mück
中科院分区：
文献类型：
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作者：
L. Vescan;T. Stoica;O. Chretien;M. Goryll;E. Mateeva;A. Mück
本文研究了由相干三维小(金字塔)岛和大(穹顶)岛组成的Ge点p-i-n二极管结构的电致发光。Ge点是通过应变诱导的孤岛作用形成的。为了研究有限面积沉积对自组装的影响，在不同面积的Si台面上沉积了包括一层Ge点的二极管结构。观察到沉积面积的减小改善了岛状结构的均匀性。结合岛状分布和电致发光光谱的分析，得出结论：小二极管中的穹顶比大二极管中的穹顶具有更小的硅含量或更少的弛豫。这些二极管的发光温度高达室温，接近1.3微米的光通信波长。
In this article we study the electroluminescence of p-i-n diode structures with Ge dots consisting of coherent three-dimensional small (pyramids) and larger (dome) islands. The Ge dots are formed through strain-induced islanding. The diode structures, including one layer with Ge dots, were deposited on Si mesas with variable areas in order to study the influence of limited area deposition on self-assembling. It was observed that the reduction of deposited area improves island uniformity. The combined analysis of island distribution and electroluminescence spectra has lead to the conclusion that domes in small diodes have a smaller Si content or are less relaxed than domes in larger diodes. The diodes are found to emit up to room temperature near the optical communication wavelength of 1.3 microns.