Polytype phase transition in the series GaSe1−xSx
Polytype phase transition in the series GaSe1−xSx
复制标题
GaSe1−xSx 系列中的多型相变
DOI：
10.1016/0022-4596(82)90039-1
复制
发表时间：
1982
影响因子：
3.3
通讯作者：
G. Egmond
中科院分区：
文献类型：
--
作者：
J. Terhell;V. Brabers;G. Egmond
用x射线衍射技术研究了用碘输运法生长的GaSe1−xSx晶体的结构。在x= 0.2和0.3 a之间发现了相偏析，这表明随着硫含量的增加，在该成分区发生了一阶向β多型转变。
The structure of crystals GaSe1−xSx, grown by the iodine transport method, has been investigated with X-ray diffraction techniques. Betweenx= 0.2 and 0.3 a phase segregation has been found, which is indicative of the first-order nature of the ϵ to β polytype transitions, which occur in this composition region with increasing sulfur content.