High-Performance Hybrid Electronic Devices from Layered PtSe2 Films Grown at Low Temperature
High-Performance Hybrid Electronic Devices from Layered PtSe2 Films Grown at Low Temperature
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DOI：
10.1021/acsnano.6b04898
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发表时间：
2016-10-01
期刊：
影响因子：
17.1
通讯作者：
Duesberg, Georg S.
中科院分区：
文献类型：
--
作者：
Yim, Chanyoung;Lee, Kangho;Duesberg, Georg S.
层状二维（2D）材料显示出巨大的应用潜力，特别是在电子领域。我们报告的大规模合成薄膜的铂二硒化物（PtSe2），迄今为止几乎没有调查过渡金属二硫属化物。重要的是，通过热辅助转化的合成是在400摄氏度下进行的，代表了这种材料与硅（Si）技术直接集成的突破。除了对这种2D材料的彻底表征外，我们还展示了其在高性能气体传感应用中的前景，由于薄膜的2D性质，观察到的响应和恢复时间极短。此外，我们实现了垂直堆叠的异质结构的PtSe2在Si上，作为光电二极管和光伏作为下一代传感器和（光）电子器件的潜在候选人，使用制造协议与既定的Si技术兼容。
Layered two-dimensional (2D) materials display great potential for a range of applications, particularly in electronics. We report the large-scale synthesis of thin films of platinum diselenide (PtSe2), a thus far scarcely investigated transition metal dichalcogenide. Importantly, the synthesis by thermally assisted conversion is performed at 400 degrees C, representing a breakthrough for the direct integration of this material with silicon (Si) technology. Besides the thorough characterization of this 2D material, we demonstrate its promise for applications in high-performance gas sensing with extremely short response and recovery times observed due to the 2D nature of the films. Furthermore, we realized vertically stacked heterostructures of PtSe2 on Si which act as both photodiodes and photovoltaic as a potential candidate for next-generation sensors and (opto-)electronic devices, using fabrication protocols compatible with established Si technologies.