Infrared Interlayer Exciton Emission in MoS2/WSe2 Heterostructures
Infrared Interlayer Exciton Emission in MoS2/WSe2 Heterostructures
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DOI：
10.1103/physrevlett.123.247402
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发表时间：
2019-12-13
影响因子：
8.6
通讯作者：
Heinz, Tony F.
中科院分区：
文献类型：
--
作者：
Karni, Ouri;Barre, Elyse;Heinz, Tony F.
我们报告从MoS 2和WSe 2过渡金属二硫属化物单层的异质结构约1 eV（1240 nm）的光发射。我们确定它的起源在层间激子（ILX）的宽光谱下的平面外电场的可调谐性。从静态偶极矩的状态，其温度和扭转角的依赖性，并与电子结构计算比较，我们分配这个ILX在这个系统中的K谷之间的基本层间过渡。我们的研究结果获得了本质上不相称的MOS 2/WSe 2异质结构的层间物理，包括莫尔和谷赝自旋效应，以及其与硅光子学和光纤通信系统的集成，工作波长超过1150 nm。
We report light emission around 1 eV (1240 nm) from heterostructures of MoS2 and WSe2 transition metal dichalcogenide monolayers. We identify its origin in an interlayer exciton (ILX) by its wide spectral tunability under an out-of-plane electric field. From the static dipole moment of the state, its temperature and twist-angle dependence, and comparison with electronic structure calculations, we assign this ILX to the fundamental interlayer transition between the K valleys in this system. Our findings gain access to the interlayer physics of the intrinsically incommensurate MOS2/WSe2 heterostructure, including moire and valley pseudospin effects, and its integration with silicon photonics and optical fiber communication systems operating at wavelengths longer than 1150 nm.