Fabrication and characterization of diamond AFM probe integrated with PZT thin film sensor and actuator
Fabrication and characterization of diamond AFM probe integrated with PZT thin film sensor and actuator
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DOI：
10.1016/j.sna.2003.11.025
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发表时间：
2004-09
影响因子：
4.6
通讯作者：
T. Shibata;K. Unno;E. Makino;S. Shimada
中科院分区：
文献类型：
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作者：
T. Shibata;K. Unno;E. Makino;S. Shimada
为了研制用于原子力显微镜（AFM）的压电传感器和驱动器金刚石探针，在金刚石薄膜衬底上制备了锆钛酸铅（PZT）薄膜，并对其压电性能进行了研究。PZT薄膜在室温下溅射，然后退火以获得钙钛矿结构。在氮气（N2）环境中以超过10°C/s的升温速率和超过500°C的温度进行快速热退火后，在平坦Si衬底上制造的PZT薄膜显示出约为− 90 pC/N的高压电常数d31，以及在氧气（O2）环境中。在金刚石薄膜衬底上，由于金刚石薄膜的粗糙表面，压电常数的值低至约-20pC/N。然而，经过极化处理后，其压电常数提高到约-65pC/N。为了实现PZT传感器和致动器上的金刚石悬臂梁，PZT薄膜也成功地图案化的反应离子蚀刻（RIE）在六氟化硫（SF6）等离子体中使用铂（Pt）上电极层作为蚀刻掩模，而没有任何损坏的金刚石层。基于PZT薄膜的制备和图形化技术，结合CVD金刚石薄膜的微细加工技术，研制了长150μm、宽50μm、厚5μm的金刚石AFM探针，压电传感器和驱动器厚度为1μm。在1×10− 15 C的电荷测量分辨率下，图像传感的分辨率和驱动力分别估计为约0.4nm和17μN。
In order to develop a diamond probe with a piezoelectric sensor and actuator for atomic force microscope (AFM), we fabricated lead zirconate titanate (PZT) thin film on a diamond thin film substrate and examined its piezoelectric properties. The PZT thin film was sputtered at room temperature and then annealed to obtain a perovskite structure. After rapid thermal annealing at temperature ramp rate of more than 10°C/s and at temperatures of more than 500°C in a nitrogen (N2) ambient, the PZT thin film fabricated on flat Si substrates showed high piezoelectric constant, d31, of about −90pC/N, as well as in an oxygen (O2) ambient. On diamond thin film substrates, the value of piezoelectric constant was as low as about −20pC/N due to rough surface of the diamond film. After a poling treatment, however, its piezoelectric constant improved to about −65pC/N. For realization of a PZT sensor and actuator on a diamond cantilever, the PZT thin film was also successfully patterned by reactive ion etching (RIE) in sulfur hexafluoride (SF6) plasma using a platinum (Pt) upper electrode layer as an etching mask without any damage on the diamond layer. Based on the fabrication and patterning of PZT thin film together with microfabrication techniques of diamond film formed by chemical vapor deposition (CVD), we demonstrate the diamond AFM probe of 150μm in length, 50μm in width, and 5μm in thickness with a PZT sensor and actuator of 1μm in thickness. The resolution of image sensing and actuation force were estimated to be about 0.4nm at a resolution of charge measurement of 1×10−15C, and 17μN at an applied voltage of 8V, respectively.