beta-Ga2O3 versus epsilon-Ga2O3: Control of the crystal phase composition of gallium oxide thin film prepared by metal-organic chemical vapor deposition
beta-Ga2O3 versus epsilon-Ga2O3: Control of the crystal phase composition of gallium oxide thin film prepared by metal-organic chemical vapor deposition
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β-Ga2O3 与 epsilon-Ga2O3：金属有机化学气相沉积制备氧化镓薄膜晶相组成的控制
DOI：
10.1016/j.apsusc.2017.05.241
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发表时间：
2017
影响因子：
6.7
通讯作者：
Wang Gang
中科院分区：
文献类型：
--
作者：
Zhuo Yi;Chen Zimin;Tu Wenbin;Ma Xuejin;Pei Yanli;Wang Gang
采用金属有机化学气相沉积法在平面蓝宝石上生长β相和ε相的氧化镓薄膜，并使用X射线衍射分析相组成。外延相图被构建为生长温度和 VI/III 比率的函数。低生长温度和低VI/III比有利于六方型ε-Ga2O3的形成。进一步的结构分析表明ε-Ga2O3与c面蓝宝石的外延关系为ε-Ga2O3(0001) || Al2O3(0001) 和 ε-Ga2O3||三氧化二铝。研究了膜增厚过程中混合相样品的结构演变。通过降低生长速率，薄膜从混合相演变为能量上有利的ε相。基于这些结果，成功地获得了具有纯相ε-Ga2O3上层的Ga2O3薄膜。
Gallium oxide thin films of β and ε phase were grown onc-plane sapphire using metal-organic chemical vapor deposition and the phase compositions were analyzed using X-ray diffraction. The epitaxial phase diagram was constructed as a function of the growth temperature and VI/III ratio. A low growth temperature and low VI/III ratio were beneficial for the formation of hexagonal-type ε-Ga2O3. Further structure analysis revealed that the epitaxial relationship between ε-Ga2O3andc-plane sapphire is ε-Ga2O3(0001) || Al2O3(0001) and ε-Ga2O3|| Al2O3. The structural evolution of the mixed-phase sample during film thickening was investigated. By reducing the growth rate, the film evolved from a mixed phase to the energetically favored ε phase. Based on these results, a Ga2O3thin film with a phase-pure ε-Ga2O3upper layer was successfully obtained.