Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor.
Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor.
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DOI：
10.1038/srep24734
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发表时间：
2016-04-21
影响因子：
4.6
通讯作者：
Joo SK
中科院分区：
文献类型：
--
作者：
Park JH;Jang GS;Kim HY;Seok KH;Chae HJ;Lee SK;Joo SK
实现具有亚kT/q亚阈值斜率（SS）的低温多晶硅（LTPS）薄膜晶体管（TFT）对于下一代有源矩阵有机发光二极管显示器的发展具有重要意义。这是第一次一个sub-kT/q SS（31.44 mV/dec）与LTPS-TFT与多晶Pb（Zr，Ti）O3（PZT）/ZrTiO 4（ZTO）栅介质已被证明。在-0.5 V的弱反型区观察到sub-kT/q SS，显示超低工作电压，具有迄今为止报道的最高迁移率（250.5 cm 2/Vsec）。此外，首次研究了负电容LTPS-TFT的直流负偏压应力、热载流子应力和自热应力的可靠性。结果发现，自热应力显示加速SS降解由于PZT居里温度。
Realizing a low-temperature polycrystalline-silicon (LTPS) thin-film transistor (TFT) with sub-kT/q subthreshold slope (SS) is significantly important to the development of next generation active-matrix organic-light emitting diode displays. This is the first time a sub-kT/q SS (31.44 mV/dec) incorporated with a LTPS-TFT with polycrystalline-Pb(Zr,Ti)O3 (PZT)/ZrTiO4 (ZTO) gate dielectrics has been demonstrated. The sub-kT/q SS was observed in the weak inversion region at −0.5 V showing ultra-low operating voltage with the highest mobility (250.5 cm2/Vsec) reported so far. In addition, the reliability of DC negative bias stress, hot carrier stress and self-heating stress in LTPS-TFT with negative capacitance was investigated for the first time. It was found that the self-heating stress showed accelerated SS degradation due to the PZT Curie temperature.