A Charge-Based Model for Long-Channel Cylindrical Surrounding-Gate MOSFETs From Intrinsic Channel to Heavily Doped Body
A Charge-Based Model for Long-Channel Cylindrical Surrounding-Gate MOSFETs From Intrinsic Channel to Heavily Doped Body
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DOI：
10.1109/ted.2008.926735
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发表时间：
2008-07
影响因子：
3.1
通讯作者：
Feng Liu;Jin He;Lining Zhang;Jian Zhang;Jingjing Hu;Chenyue Ma;M. Chan
中科院分区：
文献类型：
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作者：
Feng Liu;Jin He;Lining Zhang;Jian Zhang;Jingjing Hu;Chenyue Ma;M. Chan
提出了一种基于电荷的长沟道圆柱形包围栅mosfet从本征沟道到重掺杂体的模型。模型推导是基于在柱坐标系下泊松方程的精确反演电荷解。一般漏极电流方程是由paul - sah的对偶积分得到的，该对偶积分表示为源极和漏极倒置电荷的函数。该模型在不使用任何平滑函数的情况下对所有操作区域都有效。该模型已经通过数值模拟得到了广泛的验证，该模型具有广泛的SRG MOSFET几何参数和沟道掺杂浓度，包括未掺杂的沟道。
A charge-based model is presented for long-channel cylindrical surrounding-gate (SRG) MOSFETs from an intrinsic channel to a heavily doped body. The model derivation is based on an accurate inversion charge solution of Poisson's equation in a cylindrical coordinate system. The general drain-current equation is obtained from Pao-Sah's dual integral, which is expressed as a function of inversion charge at the source and drain terminals. The model is valid for all regions of operation without employing any smoothing function. The model has been extensively verified by numerical simulations with a wide range of SRG MOSFET geometry parameters and channel doping concentrations, including the undoped channel.