Stable and efficient Sb2Se3 solar cells with solution-processed NiOx hole-transport layer
Stable and efficient Sb2Se3 solar cells with solution-processed NiOx hole-transport layer
复制标题
DOI：
10.1016/j.solener.2021.02.063
复制
发表时间：
2021-03-21
期刊：
影响因子：
6.7
通讯作者：
Yan, Feng
中科院分区：
文献类型：
--
作者：
Guo, Liping;Vijayaraghavan, S. N.;Yan, Feng
Sb_2Se_3具有丰富的地球资源和无毒的成分，上级光电性能和独特的一维晶体结构，是一种很有前途的薄膜太阳能电池吸收材料。为了进一步提高Sb 2Se 3的功率转换效率，我们通过将溶液处理的NiOx空穴传输层（HTL）集成到Sb 2Se 3太阳能电池中来制造n-i-p结构，以增强载流子收集。在这项研究中，我们系统地筛选的厚度的NiOx HTL，并证明了改善的平均功率转换效率从6.12%到7.15%与50 nm的NiOx HTL。通过材料的微观结构、器件物理和界面电子行为来表征与改善器件性能相关的机制。它还表明，低成本和可扩展的溶液处理的NiOx HTL可以提高加速应力测试下的器件稳定性。因此，这项工作铺平了道路，以进一步提高性能的锑硫族化合物为基础的太阳能电池通过定制的无机HTL。
Sb2Se3 is a promising absorber material for thin-film solar cells owing to its earth-abundant and non-toxic constituents, superior optoelectronic properties, and unique one-dimensional crystal structure. To further increase the power conversion efficiency of the Sb2Se3, we fabricated an n-i-p structure by integrating a solutionprocessed NiOx hole-transport layer (HTL) into Sb2Se3 solar cells to enhance the carrier collection. In this study, we systematically screen the thickness of NiOx HTL and demonstrate an improved average power conversion efficiency from 6.12% to 7.15% with a 50 nm NiOx HTL. The mechanism associated with the improved device performance was characterized through the microstructure of the material, device physics, and interface electronic behaviors. It is also shown that the low-cost and scalable solution-processed NiOx HTL can improve device stability under an accelerated stress test. Thus, this work paves a way to further improve the performance of antimony chalcogenides-based solar cells via tailoring the inorganic HTL.