Very low threshold current density room temperature continuous-wave lasing from a single-layer InAs quantum-dot laser
Very low threshold current density room temperature continuous-wave lasing from a single-layer InAs quantum-dot laser
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DOI：
10.1109/68.826896
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发表时间：
2000-03-01
影响因子：
2.6
通讯作者：
Malloy, KJ
中科院分区：
文献类型：
--
作者：
Huang, XD;Stintz, A;Malloy, KJ
在应变InGaAs量子阱（dot-in-well或DWELL结构）中嵌入单个InAs量子点（QD）层的脊形波导QD激光器在室温下实现了具有非常低阈值电流密度（J（th）32.5 A/cm（2））的连续波（CW）激光操作。当腔长大于4.2 mm时，激光通过量子点基态进行，发射波长为1.25 μ m。对于5 mm长的量子点激光器，在高达40摄氏度的温度下实现了连续激光发射，特征温度T-0为41 K，接近室温。具有20 μ m条宽的激光器具有32%的微分斜率效率和>10 mW的峰值输出功率/面（未涂覆）。
Continuous-wave (CW) lasing operation with a very low threshold current density (J(th) 32.5 A/cm(2)) has been achieved at room temperature by a ridge waveguide quantum-dot (QD) laser containing a single InAs QD layer embedded within a strained InGaAs quantum well (dot-in-well, or DWELL structure). Lasing proceeds via the QD ground state,vith an emission wavelength of 1.25 mu m when the cavity length is longer than 4.2 mm, For a 5-mm long QD laser, CW lasing has been achieved at temperatures as high as 40 degrees C, with a characteristic temperature T-0 of 41 K near room temperature. Lasers with a 20 mu m stripe width have a differential slope efficiency of 32% and peak output power of >10 mW per facet (uncoated).