Ge-on-Si and Ge-on-SOI thermo-optic phase shifters for the mid-infrared
Ge-on-Si and Ge-on-SOI thermo-optic phase shifters for the mid-infrared
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DOI：
10.1364/oe.22.028479
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发表时间：
2014-11-17
期刊：
影响因子：
3.8
通讯作者：
Roelkens, Gunther
中科院分区：
文献类型：
--
作者：
Malik, Aditya;Dwivedi, Sarvagya;Roelkens, Gunther
锗硅热光移相器在5 μ m波长范围内进行了演示。基本移相器需要700 mW的功率来实现2 π相移。所需的功率降低到80 mW的完全底切使用聚焦离子束。最后，在SOI平台上实现了一种高效的热光移相器。对于Ge-on-SOI结构，实现了105 mW的调谐功率（对于2 π相移），对于独立式移相器，该调谐功率降低到16 mW。(C)2014年美国光学学会
Germanium-on-silicon thermo-optic phase shifters are demonstrated in the 5 mu m wavelength range. Basic phase shifters require 700 mW of power for a 2 pi phase shift. The required power is brought down to 80 mW by complete undercut using focused ion beam. Finally an efficient thermo-optic phase shifter is demonstrated on the germanium on SOI platform. A tuning power (for a 2 pi phase shift) of 105 mW is achieved for a Ge-on-SOI structure which is lowered to 16 mW for a free standing phase shifter. (C) 2014 Optical Society of America