CMOS-Based High-Density Silicon Microprobe Arrays for Electronic Depth Control in Intracortical Neural Recording-Characterization and Application
CMOS-Based High-Density Silicon Microprobe Arrays for Electronic Depth Control in Intracortical Neural Recording-Characterization and Application
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DOI：
10.1109/jmems.2012.2206564
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发表时间：
2012-12-01
影响因子：
2.7
通讯作者：
Ruther, Patrick
中科院分区：
文献类型：
--
作者：
Seidl, Karsten;Schwaerzle, Michael;Ruther, Patrick
本文报道了高密度互补金属氧化物半导体（CMOS）为基础的硅微探针阵列的表征和皮层内记录性能。它们的电特性表明，对于氧化铱（IrOx）和铂（Pt）电极，其对电极阻抗的贡献可忽略不计，分别为139 +/- 11 k Ω和1.2 +/- 0.1 M Ω，对串扰的贡献可忽略不计，分别为0.12%和0.98%。单轴探头的功耗被发现是57.5 μ W在电极选择。开关的噪声电压被确定为5.6 nV/root Hz;它不会对探头性能产生可测量的影响。电极阵列的记录选择性证明了在盐水溶液中的电位测量，同时使用外部探针注入刺激电流。使用所有188个电极的间距为40.7 μ m的麻醉大鼠体内记录和分析方面的单一神经活动和信噪比。通过执行探针轴的机械平移，同时电子切换到相邻电极以补偿机械移位，证明了电子深度控制的概念。[2012-0027]
This paper reports on the characterization and intracortical recording performance of high-density complementary-metal-oxide-semiconductor (CMOS)-based silicon microprobe arrays. They comprise multiplexing units integrated on the probe shafts being part of the signal transmission path. Their electrical characterization reveals a negligible contribution on the electrode impedances of 139 +/- 11 k Omega and 1.2 +/- 0.1 M Omega and on the crosstalks of 0.12% and 0.98% for iridium oxide (IrOx) and platinum (Pt) electrodes, respectively. The power consumption of the single-shaft probe was found to be 57.5 mu W during electrode selection. The noise voltage of the switches was determined to be 5.6 nV/root Hz; it does not measurably affect the probe performance. The recording selectivity of the electrode array is demonstrated by electrical potential measurements in saline solution while injecting a stimulating current using an external probe. In-vivo recordings in anesthetized rats using all 188 electrodes with a pitch of 40.7 mu m are presented and analyzed in terms of single neural activity and signal-to-noise ratio. The concept of electronic depth control is proven by performing mechanical translation of the probe shaft while electronically switching to adjacent electrodes to compensate the mechanical shift. [2012-0027]