Epitaxial growth and structural property of graphene on Pt(111)
Epitaxial growth and structural property of graphene on Pt(111)
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Pt(111)上石墨烯的外延生长及其结构特性
DOI：
10.1063/1.3543624
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发表时间：
2011-01-17
影响因子：
4
通讯作者：
Gao, H. -J.
中科院分区：
文献类型：
--
作者：
Gao, M.;Pan, Y.;Gao, H. -J.
我们报道了在Pt（111）表面外延生长石墨烯。结果表明，不同旋转畴的比例随生长温度的变化而变化，通过调节生长温度和乙烯暴露量可以提高石墨烯的质量。观察到高质量石墨烯的波纹和非波纹域。采用密度泛函理论计算了波纹和非波纹石墨烯两种模型的吸附能和电子结构，结果表明石墨烯与Pt（111）表面的相互作用很弱，其电子结构与自由石墨烯基本相同.
We report on epitaxial growth of graphene on Pt(111) surface. It was found out that the proportion of different rotational domains varies with growth temperature and the graphene quality can be improved by adjusting both the growth temperature and ethylene exposure. Rippled and unrippled domains of high quality graphene are observed. The adhesive energy and electronic structure of two models, representing rippled and unrippled graphene, are obtained with density functional theory calculation, which shows that the interaction between graphene and Pt(111) surface is very weak and the electronic structure is nearly the same as that of a free standing graphene.