Total Ionization Dose (TID) Effects on 2D MOS Devices
Total Ionization Dose (TID) Effects on 2D MOS Devices
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DOI：
10.1007/s42341-020-00255-3
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发表时间：
2020-11
影响因子：
1.9
通讯作者：
S. Bala;Raj Kumar;Arvind Kumar
中科院分区：
文献类型：
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作者：
S. Bala;Raj Kumar;Arvind Kumar
电子和电气设备用于空间应用的辐射环境。辐射通过对电子器件的干扰，具有极大的干扰电子器件基本特性的潜力。在各种电子器件中，辐射通过产生辐射诱导的总电离剂量（TID）效应、单事件效应和重离子位移损伤来影响大多数MOSFET。由于电子、带电强子、中子和伽马在器件中存在的氧化物和绝缘体中建立了电离能，从而说服了TID效应，这主要是由于器件的退化和下降。本文综述了器件中sio2和其他替代氧化物中TID的基本机理及其对mosfet中阈值电压、亚阈值摆幅和漏电流的影响。对绝缘体上硅技术的辐射响应也将进行讨论。
Electronics and Electricals devices are used in radiations environments for space applications. Radiation has immense potential to disturb the basic properties of electronics devices by interfere with the devices. Radiations affect most MOSFET among the various electronics devices, by creating radiation induced total ionizing dose (TID) effects, single event effects and heavy ion displacement damages, will be discussed. TID effects are persuaded due to ionization energy established in oxides and insulators existing in the devices, by electrons, charged hadrons, neutrons and gammas, prominent to device degradation and letdown. This paper reviews, the basic mechanism of TID in SiO2and other alternate oxides in device and how, this affects threshold voltage, Sub threshold swing and leakage current in MOSFETs. Radiations response to the silicon-on-insulator technology will also be discussed.