Continuous Color‐Tunable Light‐Emitting Devices Based on Compositionally Graded Monolayer Transition Metal Dichalcogenide Alloys
Continuous Color‐Tunable Light‐Emitting Devices Based on Compositionally Graded Monolayer Transition Metal Dichalcogenide Alloys
复制标题
基于成分梯度单层过渡金属二硫属化物合金的连续颜色可调发光器件
DOI：
10.1002/adma.202203250
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发表时间：
2022
影响因子：
29.4
通讯作者：
Takenobu Taishi
中科院分区：
文献类型：
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作者：
Pu Jiang;Ou Hao;Yamada Tomoyuki;Wada Naoki;Naito Hibiki;Ogura Hiroto;Endo Takahiko;Liu Zheng;Irisawa Toshifumi;Yanagi Kazuhiro;Nakanishi Yusuke;Gao Yanlin;Maruyama Mina;Okada Susumu;Shinokita Keisuke;Matsuda Kazunari;Miyata Yasumitsu;Takenobu Taishi
过渡金属二硫属化物（TMDC）材料的不同系列已被用于各种光电应用中，例如光电探测器、发光二极管和激光器。通常，光电器件的检测或发射范围对于活性材料的带隙是唯一的。因此，为了提高这些器件的性能，人们已经投入了大量的努力来调整带隙，例如门控、应变和介电工程。然而，这些方法的可控性受到严重限制（通常小于0.1 eV）。相比之下，合金化TMDC是一种有效的方法，其产生依赖于组成的带隙，并且能够在宽范围内发光。在这项研究中，一个颜色可调的发光器件，使用成分梯度TMDC合金制造。通过化学气相沉积生长的单层WS2/WSe2合金显示出发光能量的空间梯度，其在2.1至1.7 eV之间变化。该合金被结合在基于电解质的发光器件结构中，其可以横向地调节复合区。因此，通过控制发光位置，成功地制造了连续且可逆的颜色可调谐的发光器件。研究结果为探索单层半导体宽带光学应用提供了新的途径。
The diverse series of transition metal dichalcogenide (TMDC) materials has been employed in various optoelectronic applications, such as photodetectors, light‐emitting diodes, and lasers. Typically, the detection or emission range of optoelectronic devices is unique to the bandgap of the active material. Therefore, to improve the capability of these devices, extensive efforts have been devoted to tune the bandgap, such as gating, strain, and dielectric engineering. However, the controllability of these methods is severely limited (typically ≈0.1 eV). In contrast, alloying TMDCs is an effective approach that yields a composition‐dependent bandgap and enables light emissions over a wide range. In this study, a color‐tunable light‐emitting device using compositionally graded TMDC alloys is fabricated. The monolayer WS2/WSe2alloy grown by chemical vapor deposition shows a spatial gradient in the light‐emission energy, which varies from 2.1 to 1.7 eV. This alloy is incorporated in an electrolyte‐based light‐emitting device structure that can tune the recombination zone laterally. Thus, a continuous and reversible color‐tunable light‐emitting device is successfully fabricated by controlling the light‐emitting positions. The results provide a new approach for exploring monolayer semiconductor‐based broadband optical applications.