Deep-ultraviolet–microelectromechanical systems stencils for high-throughput resistless patterning of mesoscopic structures
Deep-ultraviolet–microelectromechanical systems stencils for high-throughput resistless patterning of mesoscopic structures
复制标题
用于介观结构高通量无阻图案化的深紫外-微机电系统模板
DOI：
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发表时间：
2004
期刊：
影响因子：
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通讯作者：
J. Brugger
中科院分区：
文献类型：
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作者：
M. V. D. Boogaart;G. Kim;R. Pellens;J. V. D. Heuvel;J. Brugger
我们描述了100毫米晶圆级深紫外线（DUV）曝光和微机电系统（MEMS）工艺的组合，以制造氮化硅膜与亚微米孔径用作微型荫罩或纳米支架。通过DUV曝光和干法等离子体蚀刻在500 nm厚的膜中制作了横向分辨率为200 nm的图形。通过使用氢氧化钾（KOH）的湿硅蚀刻和使用等离子体工艺的干硅蚀刻的组合来释放膜。毫米尺寸的支架用于单步局部沉积金属微米和纳米图案，而不需要光致抗蚀剂工艺步骤。我们已经在全晶圆规模上进行了模板沉积，用于各种金属（例如Al，Au，Ni等）的微米和纳米图案。干蚀刻的纳米线导致独立的悬臂式纳米机电系统（NEMS）结构的谐振频率在兆赫范围内。无抵抗的方法可以让我们...
We describe a combination of 100-mm wafer scale deep-ultraviolet (DUV) exposure and a microelectromechanical systems (MEMS) process to fabricate silicon nitride membranes with submicrometer apertures to be used as miniature shadow masks or nanostencils. Apertures down to a lateral resolution of 200nm were made in a 500-nm-thick membrane by DUV exposure and dry plasma etching. The membranes were released by a combination of wet silicon etching using potassium hydroxide (KOH) and dry silicon etching using a plasma process. The millimeter-size stencils were used for single-step, local deposition of metal micro- and nano-patterns without the need for photoresist process steps. We have performed stencil deposition on full wafer scale for micro- and nano-patterns in a variety of metals (e.g. Al, Au, Ni, etc.). Dry under-etching of the nanowires resulted in free-standing cantilevered nanoelectromechanical systems (NEMS) structures with resonance frequencies in the megahertz range. The resistless method allows us...