Laser-induced chemical etching of silicon in chlorine atmosphere
Laser-induced chemical etching of silicon in chlorine atmosphere
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DOI：
10.1117/12.950624
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发表时间：
1987-07
期刊：
影响因子：
--
通讯作者：
R. Kullmer;D. Bäuerle
中科院分区：
文献类型：
--
作者：
R. Kullmer;D. Bäuerle
研究了308、423和583 nm脉冲激光对（100）Si的化学腐蚀与激光能量密度和C12气压的关系。在没有激光诱导的表面熔化的情况下，蚀刻需要仅在低于500 nm的激光波长下产生的Cl自由基。在低激光能量密度（Φ（308 nm）440 mJ/cm 2）下，蚀刻是热激活的。在中间区域中，热机制和非热机制都对蚀刻速率有贡献。
Chemical etching of single-crystalline (100)Si induced by pulsed laser irradiation at 308, 423, and 583 nm has been investigated as a function of the laser fluence and C12 pressure. Without laser-induced surface melting, etching requires Cl radicals which are produced only at laser wavelengths below 500 nm. With low laser fluences (Φ(308 nm)440 mJ/cm2) etching is thermally activated. In the intermediate region both thermal and non-thermal mechanisms contribute to the etch rate.