Comprehensive investigation of gate oxide short in FinFETs
Comprehensive investigation of gate oxide short in FinFETs
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FinFET 中栅极氧化物短路的综合研究
DOI：
10.1109/vts.2017.7928960
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
M. Shams
中科院分区：
文献类型：
--
作者：
Roya Dibaj;D. Al;M. Shams
由于FinFET的三维结构和减小的关键尺寸而导致的制造复杂性已经在实现可靠的器件测试方面引起了新的挑战。栅极氧化层短路（GOS）是一个缺陷，需要彻底的调查，由于其在3D晶体管的复杂性和其对电路可靠性的重大影响。在本文中，我们提出了一个全面的研究晶体管的缺陷特性，因为我们引入针孔的栅氧化层的矩形鳍和梯形鳍形状的结构。针孔由位于沿着翅片高度和通道长度的各种尺寸的小立方体切口表示。我们的分析是在Synopsys的Sentaurus TCAD工具的帮助下进行的。本文提出的结果可以导致更现实的分析GOS缺陷模型的电路级仿真的发展。
Manufacturing complexities due to FinFET's three-dimensional structure and reduced critical dimensions have caused new challenges in achieving reliable device testing. Gate oxide short (GOS) is one of the defects that requires a thorough investigation due to its complexity in 3D transistors and its significant impact on circuit reliability. In this paper, we present a comprehensive study on the transistor defect characteristics as we introduce pinholes in the gate oxide of rectangular fin and trapezoidal fin shape structures. The pinholes are represented by small cuboid cuts of various sizes located along the fin height and channel length. Our analysis is performed with the aid of Synopsys' Sentaurus TCAD tools. The results presented in this paper can lead to the development of more realistic analytical GOS defect model for circuit level simulation.