Functional characterization of 3D-DDTC detectors fabricated at FBK-irst
Functional characterization of 3D-DDTC detectors fabricated at FBK-irst
复制标题
FBK-first 制造的 3D-DDTC 探测器的功能表征
DOI：
10.1109/nssmic.2008.4774937
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发表时间：
2008
期刊：
影响因子：
--
通讯作者：
N. Zorzi
中科院分区：
文献类型：
--
作者：
A. Zoboli;M. Boscardin;L. Bosisio;G. Dalla Betta;S. Eckert;S. Kuhn;C. Piemonte;U. Parzefall;S. Ronchin;N. Zorzi
我们提出了选定的结果，从功能特性的三维双面双型列（3D-DDTC）探测器制造的FBK，特伦托。该技术的特点是垂直于晶片表面蚀刻的柱状电极，并且不完全穿过晶片厚度，在离相对表面很短的距离处停止。正在研究的探测器来自第一批在n型衬底上制造的这些器件。我们报告的性能的微带传感器之前和之后的照射高达2× 1015 cm-2的能量密度。已进行了表征，使用微米位置分辨红外激光扫描和90锶β源设置。
We present selected results from the functional characterization of 3D-Double-Sided Double-Type Column (3D-DDTC) detectors fabricated at FBK, Trento. This technology features columnar electrodes etched perpendicularly to wafer surface and not passing all the way through the wafer thickness, stopping at short distance from the opposite surface. The detectors under investigation come from the first batch of these devices, made on n-type substrates. We report on the performances of microstrip sensors before and after irradiation up to 2×1015cm−2 fluences. The characterization has been carried out using a micrometer position resolved infrared laser scan and a 90Sr Beta source setup.