Facile morphology control of WO3 nanostructure arrays with enhanced photoelectrochemical performance
Facile morphology control of WO3 nanostructure arrays with enhanced photoelectrochemical performance
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具有增强光电化学性能的 WO3 纳米结构阵列的简便形貌控制
DOI：
10.1016/j.apsusc.2017.01.209
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发表时间：
2017-05
影响因子：
6.7
通讯作者：
Gaskov A. M.
中科院分区：
文献类型：
--
作者：
Zhou Junchen;Lin Shiwei;Chen Yongjun;Gaskov A. M.
采用适度水热法制备了垂直取向的wo3纳米结构薄膜。在合成过程中，通过调节盐酸的用量，可以很容易地控制wo3薄膜的形貌。详细研究了酸性条件对形貌控制的影响，提出了从纳米板到纳米棒的wo3纳米结构形成过程。典型的片状和棒状纳米结构阵列均比其他wo3纳米结构具有更好的光电化学性能。在1.6 V / RHE下，wo3纳米板阵列的光电流密度约为1.0 mA/cm2，而wo3纳米棒阵列的光电流密度为0.8 mA/cm2。光电流的增加主要是由于活性表面积的增大和电荷的有效转移。在甲基橙降解实验中，wo3纳米板光阳极的光电催化效率比纳米棒光阳极提高了约55%。这些结果证明了形貌优化对于提高光电化学性能的重要性。该方法为光电化学器件中光电极的纳米结构设计和形貌控制提供了一种简便、合理的方法。
A moderate hydrothermal approach has been developed to synthesize the perpendicular oriented WO3nanostructure films. The morphology of the WO3films could be easily controlled by adjusting the applied amount of HCl in the synthesis procedure. The effects of acidic conditions on morphological control were investigated in details, and the formation process of WO3nanostructures varying from nanoplates to nanorods has been proposed. Both typical platelike and rodlike nanostructure arrays demonstrate better photoelectrochemical performance than other WO3nanostructures. The WO3nanoplate arrays showed a superior photocurrent density of about 1.0 mA/cm2at 1.6 V vs. RHE, compared to 0.8 mA/cm2of the WO3nanorod arrays. The increased photocurrent can be mainly attributed to the larger active surface area and more effective charge transfer. Approximately 55% improvement in photoelectrochemical catalytic efficiency was obtained by the WO3nanoplates photoanode in comparison to the nanorods photoanode in a methyl orange degradation experiment. Such results demonstrate the importance of morphology optimization for improving the photoelectrochemical performance. And the method provides a facile and reasonable way for nanostructure design and morphology control of the photoelectrodes in photoelectrochemical devices.
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影响因子：
6.7
作者：
Kumar, S. Girish;Rao, K. S. R. Koteswara
通讯作者：
Rao, K. S. R. Koteswara
影响因子：
6.7
作者：
Singh, Trilok;Mueller, Ralf;Mathur, Sanjay
通讯作者：
Mathur, Sanjay
影响因子：
2.5
作者：
Guery, C;Choquet, C;Lassegues, JC
通讯作者：
Lassegues, JC
影响因子：
8.6
作者：
Sivula, Kevin;Le Formal, Florian;Graetzel, Michael
通讯作者：
Graetzel, Michael
影响因子：
3.3
作者：
T. Nanba;S. Takano;I. Yasui;T. Kudo
通讯作者：
T. Nanba;S. Takano;I. Yasui;T. Kudo