Film bulk acoustic resonator pressure sensor with self temperature reference
Film bulk acoustic resonator pressure sensor with self temperature reference
复制标题
带自温度参考的薄膜体声谐振压力传感器
DOI：
10.1088/0960-1317/22/12/125005
复制
发表时间：
2012-12-01
影响因子：
2.3
通讯作者：
Milne, W. I.
中科院分区：
文献类型：
--
作者：
He, X. L.;Garcia-Gancedo, L.;Milne, W. I.
设计了一种新型薄膜体声谐振器(FBAR)，该谐振器具有两个对温度变化具有相反反应的谐振频率。这两种谐振模式对温度和压力变化的响应不同，频率漂移与温度和压力变化线性相关。利用FBAR的密封后槽作为腔体，提出并验证了一种适用于同时测量压力和温度的单片FBAR传感器。实验结果表明，FBAR传感器低频峰的频率压力系数约为−17.4ppm kpa−1，第二个峰的频率压力系数约为−6.1ppm kpa−1，两者都比现有的压力传感器灵敏得多。这种双模片上压力传感器结构和操作简单，制作成本非常低，而且不需要特殊的封装，因此具有很大的应用潜力。
A novel film bulk acoustic resonator (FBAR) with two resonant frequencies which have opposite reactions to temperature changes has been designed. The two resonant modes respond differently to changes in temperature and pressure, with the frequency shift being linearly correlated with temperature and pressure changes. By utilizing the FBAR's sealed back trench as a cavity, an on-chip single FBAR sensor suitable for measuring pressure and temperature simultaneously is proposed and demonstrated. The experimental results show that the pressure coefficient of frequency for the lower frequency peak of the FBAR sensors is approximately −17.4 ppm kPa−1, while that for the second peak is approximately −6.1 ppm kPa−1, both of them being much more sensitive than other existing pressure sensors. This dual mode on-chip pressure sensor is simple in structure and operation, can be fabricated at very low cost, and yet requires no specific package, therefore has great potential for applications.