Electron scattering at dislocations in LaAlO3/SrTiO3 interfaces.
Electron scattering at dislocations in LaAlO3/SrTiO3 interfaces.
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DOI：
10.1103/physrevlett.102.046809
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发表时间：
2009-01
影响因子：
8.6
通讯作者：
S. Thiel;C. Schneider;L. Kourkoutis;D. Muller;N. Reyren;A. Caviglia;S. Gariglio;J. Triscone;J. Mannhart
中科院分区：
文献类型：
--
作者：
S. Thiel;C. Schneider;L. Kourkoutis;D. Muller;N. Reyren;A. Caviglia;S. Gariglio;J. Triscone;J. Mannhart
我们报告的微观结构缺陷和无序的氧化物界面上的二维电子气的性质的影响的实验研究。测量了LaAlO（3）/SrTiO（3）界面位错处电子散射截面，发现其值约为5 nm。我们的实验表明，这些电子气的输运性质的强烈影响，在位错核散射。
We report experimental investigations of the effects of microstructural defects and of disorder on the properties of 2D electron gases at oxide interfaces. The cross section for scattering of electrons at dislocations in LaAlO(3)/SrTiO(3) interfaces has been measured and found to equal approximately 5 nm. Our experiments reveal that the transport properties of these electron gases are strongly influenced by scattering at dislocation cores.