New Depletion-Mode IGZO TFT Shift Register
New Depletion-Mode IGZO TFT Shift Register
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DOI：
10.1109/led.2010.2090939
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发表时间：
2011-02
影响因子：
4.9
通讯作者：
Binn Kim;C. Ryoo;Sun‐Jae Kim;J. Bae;H. Seo;Chang-Dong Kim;M. Han
中科院分区：
文献类型：
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作者：
Binn Kim;C. Ryoo;Sun‐Jae Kim;J. Bae;H. Seo;Chang-Dong Kim;M. Han
提出并制造了一种采用底栅 In-Ga-Zn-O 薄膜晶体管 (IGZO TFT) 的新型移位寄存器。通过使用两个低电压电平信号成功关断耗尽型 IGZO TFT。 IGZO 移位寄存器具有无任何失真的高压输出脉冲和 417 kHz 的最大时钟频率。所提出的移位寄存器将成为耗尽型氧化物 TFT 显示器的重要构建模块。
A new shift register employing bottom-gate In-Ga-Zn-O thin-film transistors (IGZO TFTs) was proposed and fabricated. Depletion-mode IGZO TFTs were successfully turned off by employing two low-voltage-level signals. The IGZO shift register exhibited a high-voltage output pulse without any distortion and a maximum clock frequency of 417 kHz. The proposed shift register would be an important building block for a depletion-mode oxide TFT display.