Imaging Current-Induced Switching of Antiferromagnetic Domains in CuMnAs
Imaging Current-Induced Switching of Antiferromagnetic Domains in CuMnAs
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DOI：
10.1103/physrevlett.118.057701
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发表时间：
2017-01-31
影响因子：
8.6
通讯作者：
Dhesi, S. S.
中科院分区：
文献类型：
--
作者：
Grzybowski, M. J.;Wadley, P.;Dhesi, S. S.
反铁磁材料中的磁序很难用外磁场控制。使用X射线磁线性二向色显微镜，我们表明，交错的电流产生的有效领域可以诱导修改的反铁磁畴结构的微器件从tetraxylCuMnAs薄膜。证明了平均畴取向和电阻的各向异性之间的明确相关性，两者都显示出响应于正交施加的电流脉冲的可再现的切换。然而，在亚微米级的行为是不均匀的，突出了多畴反铁磁薄膜的开关过程的复杂性。
The magnetic order in antiferromagnetic materials is hard to control with external magnetic fields. Using x-ray magnetic linear dichroism microscopy, we show that staggered effective fields generated by electrical current can induce modification of the antiferromagnetic domain structure in microdevices fabricated from a tetragonal CuMnAs thin film. A clear correlation between the average domain orientation and the anisotropy of the electrical resistance is demonstrated, with both showing reproducible switching in response to orthogonally applied current pulses. However, the behavior is inhomogeneous at the submicron level, highlighting the complex nature of the switching process in multidomain antiferromagnetic films.