Suppression of Sulfur Desorption of High-Temperature Sputtered MoS2 Film by Applying DC Bias
Suppression of Sulfur Desorption of High-Temperature Sputtered MoS2 Film by Applying DC Bias
复制标题
施加直流偏压抑制高温溅射MoS2薄膜的硫脱附
DOI：
10.1149/08513.0531ecst
复制
发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Ogura Atsushi
中科院分区：
文献类型：
--
作者：
Hibino Yusuke;Ishihara Seiya;Oyanagi Yuya;Sawamoto Naomi;Ohashi Takumi;Matsuura Kentarou;Wakabayashi Hitoshi;Ogura Atsushi
在本研究中，溅射沉积已用于制造二硫化钼（MoS2）。 MoS2 溅射沉积的问题是当衬底处于高温以获得高结晶质量薄膜时，S 原子从薄膜中解吸。在本研究中，即使在高温过程中，也采用施加正直流偏压来防止S解吸。结果表明，当对基底施加+ 60 V的直流偏压、氩气分压设置为0.09 Pa、射频功率设置为225 W时，即使在600℃的沉积温度下也可以获得S/Mo= 2.0的薄膜。通过施加直流偏压抑制S脱附，溅射沉积成为MoS2和可能的其他层状材料的有利制造方法。
In this study, sputtering deposition has been used to fabricate molybdenum disulfide (MoS2). The problem with sputtering deposition of MoS2 is desorption of S atoms from the film when the substrate is brought to high temperature in order to obtain high crystalline quality thin film. In this study, application of positive DC bias was employed to prevent S desorption even in high temperature process. It was revealed that when DC bias of+ 60 V is applied with respect to the substrate, with Argon partial pressure set to 0.09 Pa and RF power set to 225 W, films with S/Mo= 2.0 can be obtained even at the deposition temperature of 600 C. With S desorption suppressed by applying DC bias, sputtering deposition makes a favorable fabrication method for MoS2 and possibly other layered materials.