Microstructure of thick AlN grown on sapphire by high-temperature MOVPE
Microstructure of thick AlN grown on sapphire by high-temperature MOVPE
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DOI：
10.1002/pssa.200565401
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发表时间：
2006-05-01
影响因子：
2
通讯作者：
Bandoh, A.
中科院分区：
文献类型：
--
作者：
Imura, M.;Nakano, K.;Bandoh, A.
在1300℃至1600℃的高温下，通过金属有机气相外延，在蓝宝石衬底上成功地直接生长了具有原子级平坦表面的厚AlN层。诸如边缘型、螺旋型和混合型等位错在AlN外延层中表现出不同的行为。 AlN的位错密度小于2×10(9)cm(-2)。观察到 AlN 的自由激子和束缚激子的峰值能量分别为 6.084 eV 和 6.063 eV。 (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆。
Thick AlN layers with atomically flat surfaces were successfully grown directly on sapphire substrates by metal-organic vapor phase epitaxy at high temperatures between 1300 degrees C and 1600 degrees C. Dislocations such as those of the edge, screw and mixed types exhibited different behaviors in the AlN epilayers. The dislocation density of AlN was less than 2 x 10(9) cm(-2). Free and bound excitons of AlN were observed with peak energies of 6.084 eV and 6.063 eV, respectively. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.