A 128-Stage Analog Accumulator for CMOS TDI Image Sensor
A 128-Stage Analog Accumulator for CMOS TDI Image Sensor
复制标题
用于 CMOS TDI 图像传感器的 128 级模拟累加器
DOI：
10.1109/tcsi.2014.2304663
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发表时间：
2014-07-01
影响因子：
5.1
通讯作者：
Xia, Yu
中科院分区：
文献类型：
--
作者：
Nie, Kaiming;Yao, Suying;Xia, Yu
分析了寄生现象对CMOSTDI图像传感器中模拟累加器性能的影响，并提出了一种改进的带去耦电容C-d的累加器来克服寄生现象。设计了128级改进型蓄能器，并对其进行了仿真。采用0.18微米一层多晶硅四金属1.8V/3.3V工艺制作了一台采用128级累加器的1024×128 CMOSTDI图像传感器样机。在线速为3875line/S的情况下，在128级时，所制作的传感器的测量灵敏度和信噪比改善分别为617.1 V/Lux.s和16.6dB。仿真和实验结果证明了去耦电容C-d对抑制模拟累加器寄生现象的有效性。改进后的累加器适用于高阶数的CMOSTDI图像传感器。
The impacts of parasitic phenomenon on the performance of the analog accumulator in CMOS TDI image sensor are analyzed in this paper, and a modified accumulator with decoupling capacitor C-d to combat the parasitic phenomenon is also proposed. A 128-stage modified accumulator is designed and simulated. A prototype 1024 X 128 CMOS TDI image sensor with the 128-stage modified accumulator is fabricated in 0.18-mu m one-poly four-metal 1.8 V/3.3 V CMOS technology. With a line rate of 3875 lines/s, at 128 stages the measured sensitivity and SNR improvement of the fabricated sensor are 617.1 V/lux.s and 16.6 dB respectively. The simulation and experiment results have proved the effectiveness of the decoupling capacitor C-d when combating the parasitic phenomenon in the analog accumulator. The proposed modified accumulator is suitable for application in CMOS TDI image sensor with high stages.