Avoidance of Growth-striae in Semiconductor and Metal Crystals grown by Zone-melting Techniques
Avoidance of Growth-striae in Semiconductor and Metal Crystals grown by Zone-melting Techniques
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DOI：
10.1038/210933a0
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发表时间：
1966-05
期刊：
影响因子：
64.8
通讯作者：
H. A. Chedzey;D. Hurle
中科院分区：
文献类型：
--
作者：
H. A. Chedzey;D. Hurle
最近的研究表明，在用区熔技术生长的半导体晶体中发现的生长条纹是由生长晶体的熔体中的温度波动引起的。(The术语生长条纹用于描述在蚀刻的晶体截面上显示的杂质的带状分布。我们中的一个人已经证明，温度波动是装在水平舟皿中的液态金属的一种特性，舟皿上施加有轴向温度梯度。在较低的温度梯度下，但仍高于某个临界梯度，温度随时间呈正弦曲线变化。
IT has recently been shown1that the growth striae found in semiconductor crystals grown by zone-melting techniques are caused by fluctuations in temperature in the melt from which the crystal is being grown. (The term growth-striae is used to describe a banded distribution of impurity revealed on etched crystal sections.) One of us has shown2that the temperature fluctuations were a characteristic property of a liquid metal contained in a horizontal boat on which was impressed an axial temperature gradient. At lower temperature gradients, but still above some critical gradient, the temperature varied sinusoidally with time.