The incorporation of arsenic in GaN by metalorganic chemical vapor deposition
The incorporation of arsenic in GaN by metalorganic chemical vapor deposition
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DOI：
10.1063/1.121242
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发表时间：
1998-04-20
影响因子：
4
通讯作者：
Coleman, JJ
中科院分区：
文献类型：
--
作者：
Li, X;Kim, S;Coleman, JJ
我们报告成功地纳入砷（As）在GaN金属有机化学气相沉积（MOCVD）。一个特征的室温发光带中心约为2.6 eV（480 nm），类似的As离子注入的GaN的峰值位置，被发现是有关的MOCVD生长的GaN：As薄膜中的As杂质。砷掺入效率作为实验条件和结构的函数。温度和功率依赖的阴极射线发光测量已被执行，以帮助建立的性质作为相关的峰。(C)1998年美国物理学会。
We report on the successful incorporation of arsenic (As) in GaN during metalorganic chemical vapor deposition (MOCVD). A characteristic room-temperature luminescence band centered around 2.6 eV (480 nm), similar to the peak position of the As ion-implanted GaN, is found to be related to the As impurity in the MOCVD grown GaN:As films. The arsenic incorporation efficiency as a function of experimental conditions and structure is presented. Temperature- and power-dependent cathodoluminescence measurements have been performed to help establish the nature of the As-related peak. (C) 1998 American Institute of Physics.