Experimental studies of collector-emitter voltage bias influence on the total ionization dose effects in NPN Si BJTs
Experimental studies of collector-emitter voltage bias influence on the total ionization dose effects in NPN Si BJTs
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NPN Si BJT 集电极-发射极偏压对总电离剂量影响的实验研究
DOI：
10.1016/j.spmi.2018.08.008
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发表时间：
2018-10-01
影响因子：
3.1
通讯作者：
Hussain, Aqil
中科院分区：
文献类型：
--
作者：
Lawal, Olarewaju Mubashiru;Liu, Shuhuan;Hussain, Aqil
研究了电压V-CE、偏压对双极结型晶体管（BJT）总电离剂量（TID）的影响。在Co-60 γ射线辐照过程中，在基极-发射极电压（V-BE）为0 ~ 1.0V的正向有源模式下，在不同的V-CE偏置条件下，以0.25V的间隔从1V ~ 2 V的范围内扫描。通过正向Gummel特性、正向电流增益（beta（f））、归一化基极剩余电流（Delta I-B/I-Bpre）、归一化集电极剩余电流（Delta I-C/I-Cpre）、归一化电流增益（beta（fpost）/beta（fpre））、理想因子（n）和功耗（P-d）分析了不同V-CE偏压条件下BJT TID的损伤机理。结果表明，在不同的偏压条件下，基极电流（I-B）和集电极电流（I-C）的增量略有不同，这也影响了它们的电流增益（Δ β（f））退化。高偏置V-CE下的电流增益退化（β（f））比低偏置V-CE下的电流增益退化更轻微。所估计的Δ I-B/I-Bpre、Δ I-C/I-Cpre和β（fpost）/β（fpre）示出了不同V-CE偏置条件的类似趋势，导致BJT的性能退化的不同分布。在不同的V-CE偏置条件下，对于V-BE从0.35 V到0.6 V，过量基极电流（Δ I-B）的理想因子（n）类似于2。因此，理想因子（n）随着V-CE偏压的升高而略微增加，并且在n峰值在TID等于130 krad（Si）处获得之后，随着累积总剂量水平的增加而减小。最后，BJT的功耗（P-d）被比较为V-CE = 2 V > 1.75 > 1.5 V > 1.25 > 1 V，并且注意到在V-BE > 0.6 V时更有效，这也与温度上升T-R一致。双极结晶体管中的T-R导致自热效应。
The voltage V-CE, bias influence studies on total ionizing dose (TID) in bipolar junction transistors (BJTs) were investigated. The BJTs were set at forward active mode of base-emitter voltage (V-BE) swept from 0 to 1.0 Vat different biased conditions of V-CE, ranging from 1 V to 2 V at an interval of 0.25 V during Co-60 gamma irradiation. The damage mechanism of TID in BJTs at different V-CE bias conditions were analysed by forward Gummel characteristics, forward current gain (beta(f)), normalized excess base current (Delta I-B/I-Bpre), normalized excess collector current (Delta I-C/I-Cpre), normalized current gain (beta(fpost)/beta(fpre)), ideality factor (n) and power dissipation (P-d). The results show that the increments of base current (I-B) and collector current (I-C) are slightly different in various V-CE bias conditions which also effects slight changes in their current gain (Delta beta(f)) degradation. The current gain degradation (beta(f)) at high bias V-CE degraded more slightly than low bias V-CE. The Delta I-B/I-Bpre , Delta I-C/I-Cpre and beta(fpost)/beta(fpre), estimated shows similar trend of different V-CE bias conditions resulting into varying distribution of performance degradation of the BJT. The ideality factors (n) for excess base current (Delta I-B) were similar to 2 for V-BE from 0.35 V to 0.6 V at different V-CE bias conditions. Thus, ideality factor (n) slightly increases as the V-CE bias rises and decreases with the increased accumulated total dose level after the n peak value was obtained at TID equals to 130 krad (Si) for irradiated BJTs. Finally, the power dissipated (P-d) by BJTs were compared as V-CE = 2 V > 1.75 > 1.5 V > 1.25 > 1 V and were noted to be more effective at V-BE > 0.6 V which also concur with temperature rise T-R. The T-R in BJTs resulted into self-heating effects.