Charging of Thin Film Phase Plates under Electron Beam Irradiation
Charging of Thin Film Phase Plates under Electron Beam Irradiation
复制标题
电子束辐照下薄膜相位板的充电
DOI：
10.1017/s1431927614002876
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发表时间：
2014
影响因子：
2.8
通讯作者：
Kohei Motoki
中科院分区：
文献类型：
--
作者：
M. Malac;M. Beleggia;R. Egerton;M. Kawasaki;M. Berge;Y. Okura;I. Ishikawa;Kohei Motoki
在TEM中电子束照射下样品的静电荷影响观察到的对比度[1]。当在物镜透镜的后焦平面放置合适的均匀薄膜时，它也可以用于产生泽尼克式相位衬度，称为无孔相位板（HFPP）衬度[2]。在这里，我们报告的影响，加热和偏置的对比度传递函数。我们的研究结果可能是相关的样品充电和其他实现的薄膜型相位板。
Electrostatic charging of samples under electron beam irradiation in a TEM affects the observed contrast [1]. It can also be used to produce Zernike-like phase contrast when a suitable uniform thin film is placed in the back focal plane of the objective lens, referred to as a hole-free phase plate (HFPP) contrast [2]. Here we report the effect of heating and biasing on contrast transfer function. Our results may be relevant to sample charging and other implementations of thin-film type phase plates.