Nanoscale Memory Repair
Nanoscale Memory Repair
复制标题
纳米级内存修复
DOI：
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
K. Itoh
中科院分区：
文献类型：
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作者：
M. Horiguchi;K. Itoh
在纳米尺度时代，由于不断增加的硬/软误差和器件参数的变化，存储器的良率和可靠性随着器件和电压的缩放而下降。这本书系统地描述了这些产量和可靠性问题在数学和工程方面，以及维修技术的阵列，基于作者在开发存储器和低压CMOS电路的长期职业生涯。纳米级记忆修复给出了各种良率模型和计算的详细解释，以及各种实用的逻辑和电路，这些对提高良率和可靠性至关重要。
Yield and reliability of memories have degraded with device and voltage scaling in the nano-scale era, due to ever-increasing hard/soft errors and device parameter variations. This book systematically describes these yield and reliability issues in terms of mathematics and engineering, as well as an array of repair techniques, based on the authors long careers in developing memories and low-voltage CMOS circuits. Nanoscale Memory Repair gives a detailed explanation of the various yield models and calculations, as well as various, practical logic and circuits that are critical for higher yield and reliability.