An associative memory based on an electronic neural network architecture
An associative memory based on an electronic neural network architecture
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基于电子神经网络架构的联想存储器
DOI：
10.1109/t-ed.1987.23118
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发表时间：
1987
影响因子：
3.1
通讯作者：
Donald M. Tennant
中科院分区：
文献类型：
--
作者：
R. Howard;Daniel B. Schwartz;J. Denker;R. Epworth;H. P. Graf;W. Hubbard;L. Jackel;B. Straughn;Donald M. Tennant
用高密度的α-Si电阻矩阵演示了一种新型的并行处理联想存储器，它由一个互连的模拟放大器阵列组成。该22 × 22电阻矩阵采用与传统VLSI工艺兼容的技术制成。该演示电路可以在1至10 µs内调用多达4个22位存储器，同时纠正至少5位输入字中的错误。这种功能在传统的数字硬件中很难有效地执行，并且是解决包括视觉和语音在内的各种模式识别问题的基础。
A high-density matrix of α-Si resistors was made to demonstrate a new type of parallel-processing associative memory consisting of an interconnected array of analog amplifiers. The 22 × 22 resistor matrix was made using a technology compatible with conventional VLSI processing. This demonstration circuit can recall up to four 22- bit memories in 1 to 10 µs while correcting errors in the input word of at least 5 bits. This function is difficult to perform efficiently in conventional digital hardware and is the basis for solving a variety of pattern-recognition problems including vision and speech.