Understanding Surfactant/Graphene Interactions Using a Graphene Field Effect Transistor: Relating Molecular Structure to Hysteresis and Carrier Mobillity
Understanding Surfactant/Graphene Interactions Using a Graphene Field Effect Transistor: Relating Molecular Structure to Hysteresis and Carrier Mobillity
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DOI：
10.1021/la3008816
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发表时间：
2012-06-05
期刊：
影响因子：
3.9
通讯作者：
Strano, Michael S.
中科院分区：
文献类型：
--
作者：
Shih, Chih-Jen;Paulus, Geraldine L. C.;Strano, Michael S.
石墨烯晶体管上的输运滞后的操纵和理解石墨烯与极性/离子吸附物之间的电子转移对于基于石墨烯的传感器器件和非易失性存储器电子器件的发展是重要的。我们研究了常用的表面活性剂在水溶液中的石墨烯分散体的石墨烯晶体管的传输特性的影响。吸附物被发现转移电子到石墨烯，散射载流子输运，并诱导额外的电子空穴水坑时，石墨烯是在二氧化硅衬底。我们涉及到特定的化学性质的一系列阴离子，阳离子和中性表面活性剂的自洽运输理论开发的石墨烯的修改的运输特性的变化。为了理解捕获在石墨烯的任一侧上的表面活性剂吸附物的影响，制造了悬浮装置。只有当石墨烯的两侧都暴露于表面活性剂时，才会观察到强滞后，这归因于它们作为电荷陷阱的功能。这项工作是第一次展示滞后的控制，使我们能够消除它的传感器和设备的应用程序或增强它，使潜在的非易失性存储器的应用。
Manipulation of transport hysteresis on graphene transistors and understanding electron transfer between graphene and polar/ionic adsorbates are important for the development of graphene-based sensor devices and nonvolatile memory electronics. We have investigated the effects of commonly used surfactants for graphene dispersion in aqueous solution on transport characteristics of graphene transistors. The adsorbates are found to transfer electrons to graphene, scatter carrier transport, and induce additional electron-hole puddles when the graphene is on an SiO2 substrate. We relate the change in transport characteristics to specific chemical properties of a series of anionic, cationic, and neutral surfactants using a modification of a self-consistent transport theory developed for graphene. To understand the effects of surfactant adsorbates trapped on either side of the graphene, suspended devices were fabricated. Strong hysteresis is observed only when both sides of the graphene were exposed to the surfactants, attributable to their function as charge traps. This work is the first to demonstrate the control of hysteresis, allowing us to eliminate it for sensor and device applications or to enhance it to potentially enable nonvolatile memory applications.