High efficient light-emitting diodes with antireflection subwavelength gratings
High efficient light-emitting diodes with antireflection subwavelength gratings
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DOI：
10.1109/lpt.2002.1021970
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发表时间：
2002-08-01
影响因子：
2.6
通讯作者：
Hane, K
中科院分区：
文献类型：
--
作者：
Kanamori, Y;Ishimori, M;Hane, K
在GaAlAs发光二极管上制作了二维亚波长光栅。SWG的图形由电子束光刻和蚀刻快原子束与Cl-2和SF6气体。所制造的光栅具有200 nm的周期和锥形光栅的形状与纵横比为1.38，以防止在光谱区域，包括850 nm的光发射的反射。在正常发射角下，发射增加了21.6%。与平坦表面相比，具有SWG的总发射度增加了60%。
A two-dimensional subwavelength grating (SWG) has been fabricated on a GaAlAs light-emitting diode (LED). The SWG is patterned by electron beam lithography and etched by fast atom beam with Cl-2 and SF6 gases. The fabricated grating has 200-nm period and the tapered grating shape with aspect ratio of 1.38 to prevent reflection in the spectral region including 850 nm light emission. The emission is increased by 21.6% at the normal emission angle. The total emittance is increased by 60% with the SWG in comparison with that of the flat surface.