Effect of HCl cleaning on InSb-Al 2 O 3 MOS capacitors
Effect of HCl cleaning on InSb-Al 2 O 3 MOS capacitors
复制标题
HCl清洗对InSb-Al 2 O 3 MOS电容器的影响
DOI：
10.1088/1361-6641/ab0331
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发表时间：
2019
影响因子：
1.9
通讯作者：
Vavasour O
中科院分区：
文献类型：
--
作者：
Vavasour O
在这项工作中，HCl处理的作用，InSb表面和InSb-Al 2 O 3介电界面的特点。X-射线光电子能谱测量表明，盐酸稀释，用异丙醇（IPA）冲洗的结果在InCl 3的表面层，这是不存在类似的盐酸-水的过程。此外，InCl 3层在200 ~ 250 ℃之间从表面脱附.在200 C和250 C温度下用Al 2 O3原子层沉积法制备了金属氧化物半导体电容器，InCl 3的存在与+0.79V平带电压漂移有关。在250 ℃下的InCl 3层的解吸逆转了这种转变，但增加的工艺温度导致增加的界面陷阱电荷（Dit）和滞后电压（VH）。这种平带电压的变化，不影响其他品质因数，提供了一个有前途的路线来操纵MOS晶体管的阈值电压，允许并行制造增强型和耗尽型器件。
In this work, the role of HCl treatments on InSb surfaces and InSb–Al 2 O 3 dielectric interfaces is characterised. X-ray photoelectron spectroscopy measurements indicate that HCl diluted in and rinsed with isopropanol (IPA) results in a surface layer of InCl 3 which is not present for similar HCl-water processes. Furthermore, this InCl 3 layer desorbs from the surface between 200 C and 250 C. Metal–oxide–semiconductor capacitors were fabricated using atomic layer deposition of Al 2 O 3 at 200 C and 250 C and the presence of InCl 3 was associated with a+ 0.79 V flatband voltage shift. The desorption of the InCl 3 layer at 250 C reversed this shift but the increased process temperature resulted in increased interface-trapped charge (D it) and hysteresis voltage (V H). This shift in flatband voltage, which does not affect other figures of merit, offers a promising route to manipulate the threshold voltage of MOS transistors, allowing enhancement-mode and depletion-mode devices to be fabricated in parallel.