Performance Enhancement of Tunnel Field-Effect Transistors by Synthetic Electric Field Effect
Performance Enhancement of Tunnel Field-Effect Transistors by Synthetic Electric Field Effect
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DOI：
10.1109/led.2014.2323337
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发表时间：
2014-07-01
影响因子：
4.9
通讯作者：
Ota, Hiroyuki
中科院分区：
文献类型：
--
作者：
Morita, Yukinori;Mori, Takahiro;Ota, Hiroyuki
在这封信中，我们提出了一种合成电场（SE）效应来增强隧道场效应晶体管（TFET）的性能。新颖的 SE-TFET 架构利用包裹在超薄外延沟道周围的栅电极感应的水平和垂直电场。与传统 TFET 相比，SE-TFET 的漏极电流增加了 100 倍。 SE-TFET 的亚阈值斜率也得到了改善，通过缩放沟道宽度和沟道厚度将其增强至 52 mV/十倍频程。
In this letter, we propose a synthetic electric field (SE) effect to enhance the performance of tunnel field-effect transistors (TFETs). The novel SE-TFET architecture utilizes both horizontal and vertical electric fields induced by a gate electrode that is wrapped around an ultrathin epitaxial channel. The drain current of the SE-TFET is increased up to 100 times in comparison with those of conventional TFETs. The subthreshold slope of the SE-TFET also improved, and enhanced to 52 mV/decade by scaling the channel width and channel thickness.