Perpendicular magnetic anisotropy in bulk and thin-film CuMnAs for antiferromagnetic memory applications
Perpendicular magnetic anisotropy in bulk and thin-film CuMnAs for antiferromagnetic memory applications
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用于反铁磁存储器应用的块状和薄膜 CuMnAs 的垂直磁各向异性
DOI：
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发表时间：
2018
影响因子：
4
通讯作者：
K. Belashchenko
中科院分区：
文献类型：
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作者：
I. Zhuravlev;A. Adhikari;K. Belashchenko
CuMnAs具有垂直磁各向异性，可作为反铁磁存储器的活性材料.信息可以存储在反铁磁畴状态，而写入和读出可以依赖于表面磁化的存在。据预测，基于第一性原理计算，易轴各向异性可以实现在大块CuMnAs通过取代几个百分点的原子由Ge，Si，Al，或B。这种效应归因于空穴掺杂引起的费米能级附近某些电子能带占据的变化。计算的磁各向异性的温度依赖性没有表现出任何异常。CuMnAs（001）薄膜也具有垂直磁各向异性。
CuMnAs with perpendicular magnetic anisotropy is proposed as an active material for antiferromagnetic memory. Information can be stored in the antiferromagnetic domain state, while writing and readout can rely on the existence of surface magnetization. It is predicted, based on first-principles calculations, that easy-axis anisotropy can be achieved in bulk CuMnAs by substituting a few percent of As atoms by Ge, Si, Al, or B. This effect is attributed to the changing occupation of certain electronic bands near the Fermi level induced by hole doping. The calculated temperature dependence of the magnetic anisotropy does not exhibit any anomalies. Thin CuMnAs(001) films are also predicted to have perpendicular magnetic anisotropy.
外延四方 CuMnAs 中顺磁到反铁磁的转变（特邀）
影响因子：
3.2
作者：
Hills V
通讯作者：
Hills V
NéelSpin-Orbit Trques和大型各向异性磁路线的编写和阅读抗铁磁MN（2）AU。
影响因子：
16.6
作者：
Bodnar SY;Šmejkal L;Turek I;Jungwirth T;Gomonay O;Sinova J;Sapozhnik AA;Elmers HJ;Kläui M;Jourdan M
通讯作者：
Jourdan M