Oxygen-vacancy-induced diffusive scattering in Fe/MgO/Fe magnetic tunnel junctions.
Oxygen-vacancy-induced diffusive scattering in Fe/MgO/Fe magnetic tunnel junctions.
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DOI：
10.1103/physrevlett.105.236801
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发表时间：
2010-11
影响因子：
8.6
通讯作者：
Youqi Ke;K. Xia;Hong Guo
中科院分区：
文献类型：
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作者：
Youqi Ke;K. Xia;Hong Guo
利用第一性原理分析方法，系统地研究了Fe/MgO/Fe磁性隧道结中氧空位对势垒的影响。位于Fe/MgO界面或界面附近的无序OV的沟道间扩散散射使隧道磁阻比(TMR)从理想的理论极限降低到目前观测到的小得多的实验范围。内部OV对TMR的影响要小得多，但它们显著增加了结电阻。用氮原子填充OV可以使TMR恢复到接近理想的理论极限。
By first principles analysis, we systematically investigate effects of oxygen vacancies (OV) in the MgO barrier of Fe/MgO/Fe magnetic tunnel junctions. The interchannel diffusive scattering by disordered OVs located at or near the Fe/MgO interface drastically reduces the tunnel magnetoresistance ratio (TMR) from the ideal theoretical limit to the presently observed much smaller experimental range. Interior OVs are far less important in influencing TMR, but they significantly increase the junction resistance. Filling OV with nitrogen atoms restores TMR to near the ideal theoretical limit.