Electrical characterization of 4H–SiC avalanche photodiodes containing threading edge and screw dislocations
Electrical characterization of 4H–SiC avalanche photodiodes containing threading edge and screw dislocations
复制标题
含有螺纹刃和螺旋位错的 4H–SiC 雪崩光电二极管的电学特性
DOI：
10.1063/1.3432663
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
P. Sandvik
中科院分区：
文献类型：
--
作者：
R. A. Berechman;M. Skowronski;S. Soloviev;P. Sandvik
研究了小面积4 H-SiC雪崩光电二极管的反向伏安特性和电致发光特性，并与螺型位错和刃型位错的存在进行了关联。在接近击穿电压的穿透位错处观察到局部电致发光，而没有任何扩展缺陷的二极管在有源区中表现出均匀的光发射。与没有位错的二极管相比，发现含有边缘位错或螺旋位错的二极管具有过量的漏电流和过早击穿。
The reverse voltage current characteristics and electroluminescence of small area 4H–SiC avalanche photodiodes were investigated and correlated with the presence of threading screw and edge dislocations. Localized electroluminescence was observed at threading dislocations at voltages close to breakdown whereas diodes without any extended defects exhibited uniform light emission in the active area. Diodes containing either edge or screw dislocations were found to have excess leakage currents and breakdown prematurely compared to diodes without dislocations.