Effect of the OH ions on SiO2/SPG/SiO2/InSb device stability

Effect of the OH ions on SiO2/SPG/SiO2/InSb device stability
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DOI：
10.1117/12.189244
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发表时间：
1994-10
期刊：
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影响因子：
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通讯作者：
Hongyi Su;Wei-guo Sun
Hongyi Su;Wei-guo Sun
中科院分区：
其他
文献类型：
--
作者：
Hongyi Su;Wei-guo Sun

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利用金属-绝缘体-半导体装置、俄歇光谱和红外吸收光谱对磷硅酸盐玻璃(sio2/SPG/sio2)/InSb中的杂质进行了研究。研究了高真空除气过程中引起漏电流的羟基离子。讨论了InSb p/n二极管的漏电流机理。讨论了羟基离子滞留在钝化膜中的原因。
A metal-insulator-semiconductor device, Auger spectroscopy and infrared absorption spectrum have been used to study the impurities in phosphorosilicate glass (sio2/SPG/sio2)/InSb. The hydroxyl ions which caused current leakage during high vacuum outgassing were investigated. The current leakage mechanism in InSb p/n diodes have been discussed. The reasons for hydroxyl ions remaining in the passivation films were mentioned.