Origin of negative temperature coefficient of resistivity in polycrystalline Ti‐N films
Origin of negative temperature coefficient of resistivity in polycrystalline Ti‐N films
复制标题
多晶Ti-N薄膜电阻率负温度系数的起源
DOI：
10.1063/1.332044
复制
发表时间：
1983
期刊：
影响因子：
--
通讯作者：
H. Mitsuhashi
中科院分区：
文献类型：
--
作者：
Y. Igasaki;H. Mitsuhashi
通过反应蒸发或溅射制备的Ti - N薄膜的电阻率温度系数（TCR）为负。有些试样的电阻率最小值和最低温度随氮含量的变化而变化。为了研究这种电阻率异常温度依赖性的来源，用x射线衍射测量了Ti - N薄膜的晶体结构。基于构造近藤效应，电阻率数据可以用现有的理论进行分析。结果表明，负TCR来源于Ti - Nx固溶相中较高浓度的间隙氮原子，以及fcc TiNx化合物中的氮空位和/或本征层错。
A negative temperature coefficient of electrical resistivity (TCR) has been observed in Ti‐N films prepared by reactive evaporation or sputtering. Some samples measured had a resistivity minimum and the minimum temperature changing with varying nitrogen contents. To study the origin of this anomalous temperature dependence of resistivity, the crystallographic structures of Ti‐N films were measured by x‐ray diffraction. The resistivity data could be analyzed in terms of the existing theory based on the structural Kondo effect. The results demonstrated that the negative TCR originated from higher concentration of interstitial nitrogen atoms in the Ti‐Nx solid‐solution phase, and nitrogen vacancies and/or intrinsic stacking faults in the fcc TiNx compounds.